When the button is pressed at certain time, the voltage V2 forms a closed loop with base-emitter of transistor as can be seen in circuit diagram. With no base current the transistor acts as open circuit and the entire supply voltage V1 will appears across it. Under initial conditions the button will be open and no current flows through the base of transistor. The 100Ω resistor is provided for limiting the current through base.

The trigger source and power source must share a common ground for the circuit to work. Here we are going to use 2N3055 as a simple switching device to drive a motor and is in common emitter configuration.Īs show in circuit we are using a motor as the load and the gate signal for turning ON the transistor is provided by 5V source with button being the triggering device. The device has good amplifying factor and also the gain is almost linear making 2N3055 one of best solution for power amplifiers.Īs mentioned earlier the 2N3055 can be used for any NPN transistor applications but for understanding the functioning of device let us consider a simple application circuit as shown below. 2N3055 is one of the basic transistors available in the market for cheap and with features being suited for many applications.ĢN3055 is also used in audio power amplifiers.

Operating temperature range: -65✬ to +200✬ĢN6673, 2N6675, complementary pair- MJ2955ĢN3055 is preferred when you want a simple switching device for medium power loads.Maximum voltage across collector and base: 100V DC.Maximum current allowed through base: 7A DC.Maximum voltage across base and emitter: 7V DC.Maximum current allowed trough collector: 15A DC.Maximum voltage across collector and emitter: 60V DC.Low collector-emitter saturation voltage.Normally used as trigger to turn ON the transistor The pin configuration of 2N3055 is given below. Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR. The device is designed for general purpose switching and amplifier applications.

2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case.

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